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Manufacturer:Matrix­ Integrated Systems

Refurbished by:Allwin21 Corp

Matrix is a Registered Trademark of Matrix Integrated Systems, Inc.The model 303 is an electro-mechanical production system used to etch materials such as nitride, oxide poly-silicon etc. from the surface of silicon or other substrate. Each wafer is processed individually by means a chemical reaction induced by a gas plasma.

Single Wafer, Multi-Step Processing
Closed-Loop Temperature Control
Pressure Control
Accurate, closed-loop pressure control with “butterfly-style” throttle valve and capacitance manometer
RF power: 100 to 500 watts
Timed cycles up to 4 hour each
Matrix 303 consists of the following major assemblies.
Main Console:
Process Model,
Operator interface Model,
Wafer Transport Module,
Elevator Module,
PC Control Module.
Power Supply Console:
RF Generator,
DC Supply,
AC Distribution,
Gas Distribution panel,
Temperature/Pressure­ Control Module.
Vacuum Pump (optional):
Vacuum Hose and Connector, Ballast Assembly.
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Allwin21 Corp. can also provide advanced Equip Robot transfer wafer technology , AW Control Software and Superior Temperature Control Technology to upgrade the refurbished Matrix303 which provides the following significant advantages.

New hardware includes: New control Board with cable, new timer counter with watch dog, Pentium Computer with 17” LCD Monitor, standard keyboard and mouse.
Software calibration and easy to be done.
More functions and I/O hardware “exposed” for easier maintenance and trouble shooting.
It is easy to edit recipe with GUI and graph display.
Save all process data on the computer hard disk.
A/D and D/A precision is 14 to 16 bits.
Detect in process and with color curve displayed on the screen.
Robot teach is on the GUI and easy to do the procedure with new concept teaching method.
Software watch dog to eliminate machine damage duo to the computer locks up or freeze.
Sensor status detect function.
On line help function
Better performance and maintenance than the original systems

Plasma Etch

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

Allwin21 Corp can provide the following refurbished Etcher equipment.

Refurbished Matrix303
Refurbished Matrix403
Refurbished Gasonics AE2001
Refurbished Gasonics PEP3510
Used Lam Rainbow 4520 Oxide Etch
Used Lam 4428 for Plasma Etch

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